Hot-Carrier Effects on Power RF LDMOS Device ReliabilityBELAÏD, M. A; KETATA, K.International workshop on thermal investigation of ICs and systems. 2008, pp 123-127, isbn 978-2-35500-008-9, 1Vol, 5 p.Conference Paper

Reliability study of power RF ldmos devices under thermal stressBELAID, M. A; KETATA, K; MOURGUES, K et al.International workshop on thermal investigation of ICs and systems. 2005, pp 38-42, isbn 2-916187-01-4, 1Vol, 5 p.Conference Paper

Performance drifts of N-MOSFETs under pulsed RF life testBELAID, M. A; GARES, M; DAOUD, K et al.Microelectronics and reliability. 2014, Vol 54, Num 9-10, pp 1851-1855, issn 0026-2714, 5 p.Conference Paper

Reliability study of power RF LDMOS device under thermal stressBELAID, M. A; KETATA, K; MOURGUES, K et al.Microelectronics journal. 2007, Vol 38, Num 2, pp 164-170, issn 0959-8324, 7 p.Conference Paper

Study of RF N^- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RFMAANANE, H; MASMOUDI, M; MARCON, J et al.Microelectronics and reliability. 2006, Vol 46, Num 5-6, pp 994-1000, issn 0026-2714, 7 p.Article

Prévision des performances à long terme des chauffe-eau solaires ― comparaison de plusieurs méthodes = Forecating long term performances of solar heating water. Comparative study of several methodsBOUDEN, C; BABA, A; BELAID, M. A et al.International thermal energy conferenceJournées internationales de l'énergie thermique. Conférence. 1993, pp 352-358, 3VolConference Paper

Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistorsBELAÏD, M. A; DAOUD, K.Microelectronics and reliability. 2010, Vol 50, Num 9-11, pp 1763-1767, issn 0026-2714, 5 p.Conference Paper

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing testsBELAÏD, M. A; KETATA, K; GARES, M et al.Microelectronics and reliability. 2007, Vol 47, Num 1, pp 59-64, issn 0026-2714, 6 p.Article

S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effectsBELAÏD, M. A; GARES, M; DAOUD, K et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1551-1556, issn 0026-2714, 6 p.Conference Paper

Electrical parameters degradation of power RF LDMOS device after accelerated ageing testsBELAÏD, M. A; KETATA, K; MASMOUDI, M et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1800-1805, issn 0026-2714, 6 p.Conference Paper

Comparative analysis of accelerated ageing effects on power RF LDMOS reliabilityBELAÏD, M. A; KETATA, K; MOURGUES, K et al.Microelectronics and reliability. 2005, Vol 45, Num 9-11, pp 1732-1737, issn 0026-2714, 6 p.Conference Paper

Study of hot-carrier effects on power RF LDMOS device reliabilityGARES, M; BELAÏD, M. A; MAANANE, H et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1394-1399, issn 0026-2714, 6 p.Conference Paper